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Self-Enabled Write-Assist Cells for High-Density SRAM in a Resistance-Dominated Technology Node

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dc.contributor.authorYeo, Minjune-
dc.contributor.authorCho, Keonhee-
dc.contributor.authorKim, Giseok-
dc.contributor.authorJo, Won Joon-
dc.contributor.authorOh, Jisang-
dc.contributor.author김세건-
dc.contributor.authorBaek, Kyeongrim-
dc.contributor.authorPark, Sungho-
dc.contributor.authorYei, Seung Jae-
dc.contributor.authorJung, Seong-Ook-
dc.date.accessioned2024-03-20T23:30:13Z-
dc.date.available2024-03-20T23:30:13Z-
dc.date.issued2024-02-18-
dc.identifier.urihttps://yscholarhub.yonsei.ac.kr/handle/2021.sw.yonsei/22908-
dc.titleSelf-Enabled Write-Assist Cells for High-Density SRAM in a Resistance-Dominated Technology Node-
dc.typeConference-
dc.identifier.doi10.1109/isscc49657.2024.10454360-
dc.citation.title2024 IEEE International Solid-State Circuits Conference (ISSCC)-
dc.citation.conferenceName2024 IEEE International Solid-State Circuits Conference (ISSCC)-
dc.citation.conferencePlace미국-
dc.citation.conferencePlaceSan Francisco, CA, USA-
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