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Thermal atomic layer deposition of ternary Ge-S-Se alloy for advanced ovonic threshold switch selectors in three-dimensional cross-point memory array
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Seungwon | - |
| dc.contributor.author | Kim, Myoungsub | - |
| dc.contributor.author | Kim, Tae Hyun | - |
| dc.contributor.author | Lee, Minkyu | - |
| dc.contributor.author | Na, Seunggyu | - |
| dc.contributor.author | 손인규 | - |
| dc.contributor.author | Kim, Taehoon | - |
| dc.contributor.author | Lee, Taeyoon | - |
| dc.contributor.author | Chung, Seung-min | - |
| dc.contributor.author | Kim, Hyungjun | - |
| dc.date.accessioned | 2024-03-21T01:30:47Z | - |
| dc.date.available | 2024-03-21T01:30:47Z | - |
| dc.date.issued | 2023-12 | - |
| dc.identifier.issn | 0925-8388 | - |
| dc.identifier.issn | 1873-4669 | - |
| dc.identifier.uri | https://yscholarhub.yonsei.ac.kr/handle/2021.sw.yonsei/22917 | - |
| dc.publisher | Elsevier BV | - |
| dc.title | Thermal atomic layer deposition of ternary Ge-S-Se alloy for advanced ovonic threshold switch selectors in three-dimensional cross-point memory array | - |
| dc.type | Article | - |
| dc.publisher.location | 스위스 | - |
| dc.identifier.doi | 10.1016/j.jallcom.2023.172284 | - |
| dc.identifier.bibliographicCitation | Journal of Alloys and Compounds, v.968 | - |
| dc.citation.title | Journal of Alloys and Compounds | - |
| dc.citation.volume | 968 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
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Collections - College of Engineering > 공과대학 전기전자공학부 > 공과대학 전기전자공학과 > 1. Journal Articles
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