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Cross-Coupled Ferroelectric FET-Based Ternary Content Addressable Memory With Energy-Efficient Match Line Scheme
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lim, Sehee | - |
| dc.contributor.author | Ko, Dong Han | - |
| dc.contributor.author | 김세건 | - |
| dc.contributor.author | Jung, Seong-Ook | - |
| dc.date.accessioned | 2025-03-25T01:00:09Z | - |
| dc.date.available | 2025-03-25T01:00:09Z | - |
| dc.date.issued | 2023-02 | - |
| dc.identifier.issn | 1549-8328 | - |
| dc.identifier.uri | https://yscholarhub.yonsei.ac.kr/handle/2021.sw.yonsei/23293 | - |
| dc.format.extent | 13 | - |
| dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | - |
| dc.title | Cross-Coupled Ferroelectric FET-Based Ternary Content Addressable Memory With Energy-Efficient Match Line Scheme | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1109/tcsi.2022.3222383 | - |
| dc.identifier.bibliographicCitation | IEEE Transactions on Circuits and Systems I: Regular Papers, v.70, no.2, pp 806 - 818 | - |
| dc.citation.title | IEEE Transactions on Circuits and Systems I: Regular Papers | - |
| dc.citation.volume | 70 | - |
| dc.citation.number | 2 | - |
| dc.citation.startPage | 806 | - |
| dc.citation.endPage | 818 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | foreign | - |
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Collections - College of Engineering > 공과대학 전기전자공학부 > 공과대학 전기전자공학과 > 1. Journal Articles
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