A Review of Phototransistors Using Metal Oxide Semiconductors: Research Progress and Future Directions
- Authors
- HyukJoon Yoo; ISAK LEE; SUJIN JUNG; SUNG MIN RHO; BYUNGHA KANG; HYUN JAE KIM
- Issue Date
- Nov-2021
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- light-absorption materials; oxide semiconductors; photosensors; phototransistors
- Citation
- ADVANCED MATERIALS, v.33, no.47, pp 2006091-1 - 2006091-25
- Journal Title
- ADVANCED MATERIALS
- Volume
- 33
- Number
- 47
- Start Page
- 2006091-1
- End Page
- 2006091-25
- URI
- https://yscholarhub.yonsei.ac.kr/handle/2021.sw.yonsei/5252
- DOI
- 10.1002/adma.202006091
- ISSN
- 0935-9648
- Abstract
- Metal oxide thin-film transistors have been continuously researched and mass-produced in the display industry. However, their phototransistors are still in their infancy. In particular, utilizing metal oxide semiconductors as phototransistors is difficult because of the limited light absorption wavelength range and persistent photocurrent (PPC) phenomenon. Numerous studies have attempted to improve the detectable light wavelength range and the PPC phenomenon. Here, recent studies on metal oxide phototransistors are reviewed, which have improved the range of light wavelengths and the PPC phenomenon by introducing an absorption layer of oxide or non-oxide hybrid structure. The materials of the absorption layer applied to absorb long-wavelength light are classified into oxides, chalcogenides, organic materials, perovskites, and nanodots. Finally, next-generation convergence studies combined with other research fields are introduced and future research directions are detailed.
- Files in This Item
-
- Appears in
Collections - College of Engineering > Electrical and Electronic Engineering > 1. Journal Articles
Items in Scholar Hub are protected by copyright, with all rights reserved, unless otherwise indicated.