Novel Method for Fabricating Visible-Light Phototransistors Based on a Homojunction-Porous IGZO Thin Film Using Mechano-Chemical Treatment
DC Field | Value | Language |
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dc.contributor.author | ISAK LEE | - |
dc.contributor.author | Joohye Jung | - |
dc.contributor.author | DONG HYUN CHOI | - |
dc.contributor.author | SUJIN JUNG | - |
dc.contributor.author | KYUNG MOON KWAK | - |
dc.contributor.author | HYUN JAE KIM | - |
dc.date.accessioned | 2021-11-30T10:40:48Z | - |
dc.date.available | 2021-11-30T10:40:48Z | - |
dc.date.issued | 2021-08 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://yscholarhub.yonsei.ac.kr/handle/2021.sw.yonsei/5254 | - |
dc.description.abstract | A homojunction-structured oxide phototransistor based on a mechano-chemically treated indium?gallium?zinc oxide (IGZO) absorption layer is reported. Through this novel and facile mechano-chemical treatment, mechanical removal of the cellophane adhesive tape induces reactive radicals and organic compounds on the sputtered IGZO film surface. Surface modification, following the mechano-chemical treatment, caused porous sites in the solution-processed IGZO film, which can give rise to a homojunction-porous IGZO (HPI) layer and generate sub-gap states from oxygen-related defects. These intentionally generated sub-gap states played a key role in photoelectron generation under illumination with relatively long-wavelength visible light despite the wide band gap of IGZO (>3.0 eV). Compared with conventional IGZO phototransistors, our HPI phototransistor displayed outstanding optoelectronic characteristics and sensitivity; we measured a threshold voltage (Vth) shift from 3.64 to ?6.27 V and an on/off current ratio shift from 4.21 × 1010 to 4.92 × 102 under illumination with a 532 nm green light of 10 mW/mm2 intensity and calculated a photosensitivity of 1.16 × 108. The remarkable optoelectronic characteristics and high optical transparency suggest optical sensor applications. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Novel Method for Fabricating Visible-Light Phototransistors Based on a Homojunction-Porous IGZO Thin Film Using Mechano-Chemical Treatment | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1021/acsami.1c09012 | - |
dc.identifier.scopusid | 2-s2.0-85112286492 | - |
dc.identifier.wosid | 000683741400070 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.13, no.30, pp 35,981 - 35,989 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 13 | - |
dc.citation.number | 30 | - |
dc.citation.startPage | 35,981 | - |
dc.citation.endPage | 35,989 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | phototransistors | - |
dc.subject.keywordAuthor | oxide thin-film transistors | - |
dc.subject.keywordAuthor | indium gallium zinc oxide | - |
dc.subject.keywordAuthor | mechano-chemical treatment | - |
dc.subject.keywordAuthor | sub-gap states | - |
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