Mechanochemical and Thermal Treatment for Surface Functionalization to Reduce the Activation Temperature of In-Ga-Zn-O Thin-film Transistors
DC Field | Value | Language |
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dc.contributor.author | Lee, I. Sak | - |
dc.contributor.author | Tak, Young Jun | - |
dc.contributor.author | Kang, Byung Ha | - |
dc.contributor.author | Yoo, Hyukjoon | - |
dc.contributor.author | Jung, Sujin | - |
dc.contributor.author | Kim, Hyun Jae | - |
dc.date.accessioned | 2021-12-01T08:40:23Z | - |
dc.date.available | 2021-12-01T08:40:23Z | - |
dc.date.issued | 2020-04 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.issn | 1944-8252 | - |
dc.identifier.uri | https://yscholarhub.yonsei.ac.kr/handle/2021.sw.yonsei/5374 | - |
dc.description.abstract | Amorphous indium-gallium-zinc oxide (a-IGZO) films, which are widely regarded as a promising material for the channel layer in thin-film transistors (TFTs), require a relatively high thermal annealing temperature to achieve switching characteristics through the formation of metal-oxygen (M-O) bonding (i.e., the activation process). The activation process is usually carried out at a temperature above 300 degrees C; however, achieving activation at lower temperatures is essential for realizing flexible display technologies. Here, a facile, low-cost, and novel technique using cellophane tape for the activation of a-IGZO films at a low annealing temperature is reported. In terms of mechanochemistry, mechanical pulling of the cellophane tape induces reactive radicals on the a-IGZO film surface, which can give rise to improvements in the properties of the a-IGZO films, leading to an increase in the number of M-O bonds and the carrier concentration via radical reactions, even at 200 degrees C. As a result, the a-IGZO TFTs, compared to conventionally annealed a-IGZO TFTs, exhibited improved electrical performances, such as mobility, on/off current ratio, and threshold voltage shift (under positive bias temperature and negative bias temperature stress for 10,000 s at 50 degrees C) from 8.25 to 12.81 cm(2)/(V.s), 2.85 x 10(7) to 1.21 x 10(8), 6.81 to 3.24 V, and -6.68 to -4.93 V, respectively. | - |
dc.format.extent | 7 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | American Chemical Society | - |
dc.title | Mechanochemical and Thermal Treatment for Surface Functionalization to Reduce the Activation Temperature of In-Ga-Zn-O Thin-film Transistors | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1021/acsami.9b22831 | - |
dc.identifier.scopusid | 2-s2.0-85084027017 | - |
dc.identifier.wosid | 000529202100098 | - |
dc.identifier.bibliographicCitation | ACS Applied Materials and Interfaces, v.12, no.16, pp 19123 - 19129 | - |
dc.citation.title | ACS Applied Materials and Interfaces | - |
dc.citation.volume | 12 | - |
dc.citation.number | 16 | - |
dc.citation.startPage | 19123 | - |
dc.citation.endPage | 19129 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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