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Mechanochemical and Thermal Treatment for Surface Functionalization to Reduce the Activation Temperature of In-Ga-Zn-O Thin-film Transistors

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dc.contributor.authorLee, I. Sak-
dc.contributor.authorTak, Young Jun-
dc.contributor.authorKang, Byung Ha-
dc.contributor.authorYoo, Hyukjoon-
dc.contributor.authorJung, Sujin-
dc.contributor.authorKim, Hyun Jae-
dc.date.accessioned2021-12-01T08:40:23Z-
dc.date.available2021-12-01T08:40:23Z-
dc.date.issued2020-04-
dc.identifier.issn1944-8244-
dc.identifier.issn1944-8252-
dc.identifier.urihttps://yscholarhub.yonsei.ac.kr/handle/2021.sw.yonsei/5374-
dc.description.abstractAmorphous indium-gallium-zinc oxide (a-IGZO) films, which are widely regarded as a promising material for the channel layer in thin-film transistors (TFTs), require a relatively high thermal annealing temperature to achieve switching characteristics through the formation of metal-oxygen (M-O) bonding (i.e., the activation process). The activation process is usually carried out at a temperature above 300 degrees C; however, achieving activation at lower temperatures is essential for realizing flexible display technologies. Here, a facile, low-cost, and novel technique using cellophane tape for the activation of a-IGZO films at a low annealing temperature is reported. In terms of mechanochemistry, mechanical pulling of the cellophane tape induces reactive radicals on the a-IGZO film surface, which can give rise to improvements in the properties of the a-IGZO films, leading to an increase in the number of M-O bonds and the carrier concentration via radical reactions, even at 200 degrees C. As a result, the a-IGZO TFTs, compared to conventionally annealed a-IGZO TFTs, exhibited improved electrical performances, such as mobility, on/off current ratio, and threshold voltage shift (under positive bias temperature and negative bias temperature stress for 10,000 s at 50 degrees C) from 8.25 to 12.81 cm(2)/(V.s), 2.85 x 10(7) to 1.21 x 10(8), 6.81 to 3.24 V, and -6.68 to -4.93 V, respectively.-
dc.format.extent7-
dc.language영어-
dc.language.isoENG-
dc.publisherAmerican Chemical Society-
dc.titleMechanochemical and Thermal Treatment for Surface Functionalization to Reduce the Activation Temperature of In-Ga-Zn-O Thin-film Transistors-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1021/acsami.9b22831-
dc.identifier.scopusid2-s2.0-85084027017-
dc.identifier.wosid000529202100098-
dc.identifier.bibliographicCitationACS Applied Materials and Interfaces, v.12, no.16, pp 19123 - 19129-
dc.citation.titleACS Applied Materials and Interfaces-
dc.citation.volume12-
dc.citation.number16-
dc.citation.startPage19123-
dc.citation.endPage19129-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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