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P‐18: Improving Switching Characteristics of p‐type Copper Oxide Thin‐film Transistors by Germanium Oxide Passivation through Reactive Sputtering

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dc.contributor.authorMin, Won Kyung-
dc.contributor.authorPark, Sung Pyo-
dc.contributor.authorJung, Tae Soo-
dc.contributor.authorKim, Hee Jun-
dc.contributor.authorLee, Jin Hyeok-
dc.contributor.authorPark, Kyungho-
dc.contributor.authorKim, Hyun Jae-
dc.date.accessioned2023-04-17T04:40:08Z-
dc.date.available2023-04-17T04:40:08Z-
dc.date.issued2019-06-
dc.identifier.issn0097-966X-
dc.identifier.issn2168-0159-
dc.identifier.urihttps://yscholarhub.yonsei.ac.kr/handle/2021.sw.yonsei/6518-
dc.format.extent4-
dc.titleP‐18: Improving Switching Characteristics of p‐type Copper Oxide Thin‐film Transistors by Germanium Oxide Passivation through Reactive Sputtering-
dc.typeArticle-
dc.identifier.doi10.1002/sdtp.13167-
dc.identifier.bibliographicCitationDigest of Technical Papers - SID International Symposium, v.50, no.1, pp 1279 - 1282-
dc.citation.titleDigest of Technical Papers - SID International Symposium-
dc.citation.volume50-
dc.citation.number1-
dc.citation.startPage1279-
dc.citation.endPage1282-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassother-
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