P‐18: Improving Switching Characteristics of p‐type Copper Oxide Thin‐film Transistors by Germanium Oxide Passivation through Reactive Sputtering
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Min, Won Kyung | - |
dc.contributor.author | Park, Sung Pyo | - |
dc.contributor.author | Jung, Tae Soo | - |
dc.contributor.author | Kim, Hee Jun | - |
dc.contributor.author | Lee, Jin Hyeok | - |
dc.contributor.author | Park, Kyungho | - |
dc.contributor.author | Kim, Hyun Jae | - |
dc.date.accessioned | 2023-04-17T04:40:08Z | - |
dc.date.available | 2023-04-17T04:40:08Z | - |
dc.date.issued | 2019-06 | - |
dc.identifier.issn | 0097-966X | - |
dc.identifier.issn | 2168-0159 | - |
dc.identifier.uri | https://yscholarhub.yonsei.ac.kr/handle/2021.sw.yonsei/6518 | - |
dc.format.extent | 4 | - |
dc.title | P‐18: Improving Switching Characteristics of p‐type Copper Oxide Thin‐film Transistors by Germanium Oxide Passivation through Reactive Sputtering | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/sdtp.13167 | - |
dc.identifier.bibliographicCitation | Digest of Technical Papers - SID International Symposium, v.50, no.1, pp 1279 - 1282 | - |
dc.citation.title | Digest of Technical Papers - SID International Symposium | - |
dc.citation.volume | 50 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1279 | - |
dc.citation.endPage | 1282 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | other | - |
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