SRAM Write Assist Circuit Using Cell Supply Voltage Self-Collapse With Bitline Charge Sharing for Near-Threshold Operation
DC Field | Value | Language |
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dc.contributor.author | Cho, Keonhee | - |
dc.contributor.author | Park, Juhyun | - |
dc.contributor.author | Kim, Kiryong | - |
dc.contributor.author | Oh, Tae Woo | - |
dc.contributor.author | Jung, Seong-Ook | - |
dc.date.accessioned | 2023-04-21T01:40:09Z | - |
dc.date.available | 2023-04-21T01:40:09Z | - |
dc.date.issued | 2022-03 | - |
dc.identifier.issn | 1549-7747 | - |
dc.identifier.issn | 1558-3791 | - |
dc.identifier.uri | https://yscholarhub.yonsei.ac.kr/handle/2021.sw.yonsei/6573 | - |
dc.description.abstract | This brief presents SRAM write assist circuit using cell supply voltage self-collapse with bitline charge sharing (SC-BCS) that can lower the minimum operating voltage to the near-threshold voltage (V-th) region while consuming a minimal write energy. The proposed SC-BCS improves the write-ability by utilizing the cell supply voltage (CVDD) self-collapse and the feedback operation through the detection of write failure. Because the amount of CVDD collapse is regulated automatically depending on the write-ability of the selected cell, the write energy of the proposed SC-BCS is effectively reduced. The proposed SC-BCS can achieve a 5 sigma write-ability yield with a smaller delay overhead than gate-modulated self-collapse and self-collapse write assists in the near-V-th region. In addition, the proposed SC-BCS consumes the lowest write energy with minimal delay overhead or without any delay overhead compared with the strong-bias transient CVDD collapse and pulsed-pMOS transient CVDD collapse. The measurement result of the test chip fabricated using 65-nm CMOS technology indicates that the proposed SC-BCS can operate without any failure up to 0.36 V consuming write power 12.6 mu W/MHz. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | SRAM Write Assist Circuit Using Cell Supply Voltage Self-Collapse With Bitline Charge Sharing for Near-Threshold Operation | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1109/TCSII.2021.3103916 | - |
dc.identifier.wosid | 000770045800184 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, v.69, no.3, pp 1567 - 1571 | - |
dc.citation.title | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | - |
dc.citation.volume | 69 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1567 | - |
dc.citation.endPage | 1571 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | MB SRAM | - |
dc.subject.keywordAuthor | Transistors | - |
dc.subject.keywordAuthor | SRAM cells | - |
dc.subject.keywordAuthor | Logic gates | - |
dc.subject.keywordAuthor | Transient analysis | - |
dc.subject.keywordAuthor | Delays | - |
dc.subject.keywordAuthor | Circuits and systems | - |
dc.subject.keywordAuthor | Circuit stability | - |
dc.subject.keywordAuthor | Energy efficiency | - |
dc.subject.keywordAuthor | near-threshold operation | - |
dc.subject.keywordAuthor | static random access memory (SRAM) | - |
dc.subject.keywordAuthor | SRAM write assist circuit | - |
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