ScholarWorks@Y-Scholar Hub

초록

We characterize the electrical and optical properties of WSe2 and ZnO films obtained by integrating self-limiting layer synthesis (SLS) and atomic layer deposition (ALD) to form a vertically stacked 2D-3D hybrid heterojunction p-n diode. The SLS approach provided wafer-scale, uniform WSe2 with abundant nucleation sites, which significantly reduced the nucleation delay of ALD ZnO growth and enabled conformal heterostructure formation. The ZnO/WSe2 hybrid heterojunction diode exhibits high performance with gate-tunable electrical properties, including a rectification ratio of similar to 10(3). The photovoltaic response indicates an open-circuit voltage of 0.3 V. For photovoltaic operation, we investigated the switching photoresponse of the ZnO/WSe2 heterojunction p-n diode without applying a gate bias and observed rapid response and recovery times. Therefore, the 2D-3D hybrid heterojunction diode demonstrates viable photovoltaic properties for application in optoelectronic devices.