Enhancement in the Mobility and the Stability of Solution-Processed ZincTin Oxide Thin-Film Transistors Using Alkali Metal Superoxide
  • Jung, T.S.
  • Lee, H.
  • Kim, H.J.
  • Lee, J.H.
  • Min, W.K.
  • ... Park, Kyungho
  • 외 1명
Citations

SCOPUS

1

초록

We have studied how to improve the mobility and stability of solution processed zinc-tin oxide thin-film transistors (ZTO TFTs) simultaneously using multifunctional potassium superoxide precursor. Potassium cations in the potassium superoxide precursor acts as a shallow donor in the ZTO thin film to improve the carrier concentration (electron), which allows the potassium-doped ZTO TFT to exhibit high mobility. Then, the anion of the precursor exists as a superoxide radical, and it showed the effect of reducing the oxygen vacancy in the process of forming the oxide thin film. Consequently, potassiumdoped ZTO TFT using potassium superoxide precursor exhibited improved mobility and stability, showing an increase in the mobility from 5.11 to 8.36 cm2/Vs and a decrease in the threshold voltage shift from 4.65 to 3.36 V under a negative bias temperature illumination stress test conducted over 5,000 sec.. © 2019 SID.

키워드

Alkali metalOxide semiconductorSolution processSuperoxide radicalThin film transistor
제목
Enhancement in the Mobility and the Stability of Solution-Processed ZincTin Oxide Thin-Film Transistors Using Alkali Metal Superoxide
저자
Jung, T.S.Lee, H.Kim, H.J.Lee, J.H.Min, W.K.Park, KyunghoKim, H.J.
DOI
10.1002/sdtp.13172
발행일
2019-05
유형
Conference Paper
저널명
Digest of Technical Papers - SID International Symposium
50
1
페이지
1298 ~ 1301