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초록

Platinum-group metal chalcogenides exhibit significant potential for electronic and optoelectronic applications due to their promising semiconducting properties. However, the growth of iridium chalcogenides remains underdeveloped, mainly due to challenges such as the limited availability of suitable precursors, difficulties in achieving precise stoichiometric control, and the complexity of their crystallization processes. In this work, we present the first successful synthesis of Ir3Se8 thin films via chemical vapor deposition (CVD) using a novel iridium precursor, tricarbonyl (1,2,3-eta)-1,2,3-tri(tert-butyl)-cyclopropenyl iridium (TICP), with Se powder. The films were deposited at temperatures ranging from 300 to 500 degrees C, and structural analysis revealed that 300 degrees C is the optimal growth temperature for obtaining high-quality, stoichiometric Ir3Se8 films. Optical characterization of Ir3Se8 using UV-Vis-NIR spectroscopy determined the bandgap to be 0.67 eV, confirming its semiconducting nature. Additionally, metal-semiconductor-metal (MSM) devices fabricated with the synthesized Ir3Se8 films demonstrated stable near-infrared (NIR) photoresponse. Furthermore, gas sensor measurements exhibited a high response of 640% and a recovery rate of 97% for NO2 detection at room temperature. This study provides a novel approach for the low-temperature synthesis of Ir3Se8 and highlights its potential in optoelectronic and gas sensing applications.