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초록

The pursuit of multibit memory has intensified as high-density storage becomes increasingly critical. However, most oxide devices still depend on a single programming stimulus, restricting tunable current ranges and multilevel capability. Here, we overcome this limitation by introducing a magnesium oxide (MgOX) dual-input modulation layer (DML) into an oxide memtransistor, enabling dual electrical and optical programming. This design achieves broad and tunable current-level modulation, resulting in robust multilevel memory operation. Under the electrical input, the proposed memtransistor shows an increased hysteresis of 14.38 V. Under the optical input (red light illumination at 5 mW/mm2), the photoresponsivity, photosensitivity, and detectivity of the device increased to 751.375 A/W, 2.89 x 105, and 6.98 x 1010 Jones, respectively. Electrical inputs provided high-current level modulation (1.51 x 10-8 similar to 8.28 x 10-7 A), whereas optical inputs enabled tunable low-current level ranges (8.74 x 10-7 similar to 2.46 x 10-5 A). This result indicates that electron trapping and de-trapping within the DML enabled operation via an electrical input. Simultaneously, the increase in the valence band maximum of the oxide semiconductor was caused by the oxygen vacancies generated through the DML-facilitated operation via optical input. Furthermore, 64 drain current levels were successfully demonstrated under both inputs.