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Improving Performances of Oxide Phototransistors Using a Mechano-Chemically Treated Porous Visible Light Absorption Layer
- ISAK LEE;
- 김동우;
- 정수진;
- BYUNGHA KANG;
- HYUN JAE KIM
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11초록
In this research, the use of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with a porous oxide layer (POL) resulting from the mechanochemical treatment of spin-coated oxide films is suggested for the detection of visible light. Mechanochemical treatment is a new technique that uses cellophane tape to induce the selective formation of hydrophobic dots on the surface of the a-IGZO. These dots interfere with the deposition of the film during spin coating, resulting in pore formation. The IGZO TFT with a POL exhibits 341.32 A/W photoresponsivity, 1.10 x 10(6) photosensitivity, and 4.54 x 10(10) Jones detectivity under 532 nm light illumination.
키워드
Indium Gallium Zinc oxide; visible light; cellophane tape; mechanochemical; hydrophobic dot
- 제목
- Improving Performances of Oxide Phototransistors Using a Mechano-Chemically Treated Porous Visible Light Absorption Layer
- 저자
- ISAK LEE; 김동우; 정수진; BYUNGHA KANG; HYUN JAE KIM
- 발행일
- 2020-11
- 권
- 21
- 호
- 4
- 페이지
- 217 ~ 222