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초록

Arrays of thin-film transistors can be fabricated on the 5-inch wafer scale using solution-based processing of molybdenum disulfide and sodium-embedded alumina inks for the semiconductor and gate dielectric, respectively, yielding devices with room-temperature mobilities of up to 80 cm(2) V-1 s(-1).,Two-dimensional materials made via solution processing could be used to create next-generation electronic devices at scale. However, existing solution processing methods typically have a trade-off between scalability and material quality, which makes them unsuitable for practical applications. Here we show that wafer-scale arrays of molybdenum-disulfide-based transistors can be fabricated using a commercial slot-die printing process. We create inks of molybdenum disulfide nanosheets and sodium-embedded alumina for printing of the semiconductor and gate dielectric layer, respectively. The transistors exhibit average charge carrier mobilities of 80.0 cm(2) V-1 s(-1) in field-effect transistor measurements and 132.9 cm(2) V-1 s(-1) in Hall measurements at room temperature. The high charge carrier mobility is attributed to the sodium-embedded alumina gate dielectric, which causes a band-like charge carrier transport in the molybdenum-disulfide-nanosheet-based thin-film networks. We use the transistors to create various logic gates, including NOT, NOR, NAND and static random-access memory.,