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YONSEI University

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이솔

College of Science (Physics)

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1D cyanide chains:1||2D hexagonal crystals:1||3RMoS2:1||Aberrationcorrected TEM imaging:1||Atomic force microscopy:1||Chemical vapor deposition:1||Crystalline edge structure:1||Deep learning:1||Defect:1||Electrodes:1||Evolution reactions:1||Graphene protection:1||Mechanical cleaning of 2D crystals:1||Mechanical transfer:1||Molybdenum disulfide:1||PDMS residues:1||Phosphorene:1||Plasma:1||Polymorph:1||ReS2:1||TEM image analysis:1||WSe2/MoTe2 heterojunction:1||birefringence:1||black phosphorus:1||canning transmission electron microscopy:1||chemical functionalization:1||chemical vapor deposition:1||domain structure:1||flexible optoelectronics:1||fluorination:1||graphene:1||group IVVI monochalcogenides:1||hexagonal GeSe:1||interface:1||interface traps:1||interlayer interaction:1||intervalley scattering:1||metal oxides:1||metalsemiconductor junction:1||neuromorphic device:1||new polymorph:1||nonvolatile memory:1||optical anisotropy:1||oriented van der Waals epitaxy:1||polarized Raman spectroscopy:1||rhenium disulfide:1||solution process:1||stack channel FET:1||substrate interaction:1||superlattices:1||thinfllm transistor:1||transitionmetal dichalcogenides:1||transmission electron microscopy:1||valleytronics:1||vertical heterostructures:1||

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Yonsei University 50 Yonsei-ro Seodaemun-gu, Seoul, 03722, Republic of Korea1599-1885

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