Atomic Layer Deposition of Al2O3 on 2D MoS2 for Enhancing the Recovery rate of Gas Sensor

Abstract

In the field of gas sensors, two-dimensional (2D) transition metal dichalcogenides (TMDs) have received vast attention due to their high surface-to-volume ratio and the detection of a variety of analytes at room temperature. However, despite these outstanding properties, 2D TMD gas sensors are restricted its use for practical applications because they are not able to recover its initial base resistance value at room temperature owing to strong chemical binding between surface and gas molecules. In this study, we present passivation method by partially depositing Al2O3 on the MoS2 using atomic layer deposition (ALD) process. Using this process, Al2O3 nanoparticle deposited on MoS2 which reduce the chemisorption sites between gas molecules and MoS2 surface. Therefore, the recovery rate enhanced compared to the bare MoS2 gas sensors at room temperature.