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Improving Performances of Oxide Phototransistors Using a Mechano-Chemically Treated Porous Visible Light Absorption Layer
- Authors
- ISAK LEE; 김동우; 정수진; BYUNGHA KANG; HYUN JAE KIM
- Issue Date
- Nov-2020
- Publisher
- Korean Information Display Society
- Keywords
- Indium Gallium Zinc oxide; visible light; cellophane tape; mechanochemical; hydrophobic dot
- Citation
- Journal of Information Display, v.21, no.4, pp 217 - 222
- Pages
- 6
- Journal Title
- Journal of Information Display
- Volume
- 21
- Number
- 4
- Start Page
- 217
- End Page
- 222
- ISSN
- 1598-0316
- Abstract
- In this research, the use of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with a porous oxide layer (POL) resulting from the mechanochemical treatment of spin-coated oxide films is suggested for the detection of visible light. Mechanochemical treatment is a new technique that uses cellophane tape to induce the selective formation of hydrophobic dots on the surface of the a-IGZO. These dots interfere with the deposition of the film during spin coating, resulting in pore formation. The IGZO TFT with a POL exhibits 341.32 A/W photoresponsivity, 1.10 x 10(6) photosensitivity, and 4.54 x 10(10) Jones detectivity under 532 nm light illumination.
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Related Researcher
- I Sak, Lee
- College of Engineering (Electrical and Electronic Engineering)