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Polyimide-Doped Indium-Gallium-Zinc Oxide-Based Transparent and Flexible Phototransistor for Visible Light DetectionPolyimide-Doped Indium–Gallium–Zinc Oxide-Based Transparent and Flexible Phototransistor for Visible Light Detection

Other Titles
Polyimide-Doped Indium–Gallium–Zinc Oxide-Based Transparent and Flexible Phototransistor for Visible Light Detection
Authors
Ki Seok Kim김민성jusung Chung김동우ISAK LEEHYUN JAE KIM
Issue Date
May-2022
Publisher
AMER CHEMICAL SOC
Keywords
oxide semiconductor; phototransistor; polyimide; indium?gallium?zinc oxide; subgap states
Citation
ACS APPLIED MATERIALS & INTERFACES, v.14, no.18, pp.21,150 - 21,158
Journal Title
ACS APPLIED MATERIALS & INTERFACES
Volume
14
Number
18
Start Page
21,150
End Page
21,158
URI
https://yscholarhub.yonsei.ac.kr/handle/2021.sw.yonsei/6298
DOI
10.1021/acsami.2c01769
ISSN
1944-8244
Abstract
We report a transparent and flexible polyimide (PI)-doped single-layer (PSL) phototransistor for the detection of visible light. The PSL was deposited on a SiO2 gate insulator by a co-sputtering process using amorphous indium-gallium-zinc oxide (IGZO) and PI targets simultaneously. The PSL acted as both a channel layer and a visible-light absorption layer. PI is one of the few flexible organic materials that can be fabricated into sputtering targets. Compared with the IGZO phototransistor without PI doping, the PSL phototransistor exhibited improved optoelectronic characteristics under illumination with 635 nm red light of 1 mW/mm2 intensity; the obtained photoresponsivity ranged from 15.00 to 575.00 A/W, the photosensitivity from 1.38 × 101 to 9.86 × 106, and the specific detectivity from 1.35 × 107 to 5.83 × 1011 Jones. These improvements are attributed to subgap states induced by the PI doping, which formed decomposed organic molecules, oxygen vacancies, and metal hydroxides. Furthermore, a flexible PSL phototransistor was fabricated and showed stable optoelectronic characteristics even after 10,000 bending tests.
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