Polyimide-Doped Indium-Gallium-Zinc Oxide-Based Transparent and Flexible Phototransistor for Visible Light DetectionPolyimide-Doped Indium–Gallium–Zinc Oxide-Based Transparent and Flexible Phototransistor for Visible Light Detection
- Other Titles
- Polyimide-Doped Indium–Gallium–Zinc Oxide-Based Transparent and Flexible Phototransistor for Visible Light Detection
- Authors
- Ki Seok Kim; 김민성; jusung Chung; 김동우; ISAK LEE; HYUN JAE KIM
- Issue Date
- May-2022
- Publisher
- AMER CHEMICAL SOC
- Keywords
- oxide semiconductor; phototransistor; polyimide; indium?gallium?zinc oxide; subgap states
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.14, no.18, pp 21,150 - 21,158
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 14
- Number
- 18
- Start Page
- 21,150
- End Page
- 21,158
- URI
- https://yscholarhub.yonsei.ac.kr/handle/2021.sw.yonsei/6298
- DOI
- 10.1021/acsami.2c01769
- ISSN
- 1944-8244
1944-8252
- Abstract
- We report a transparent and flexible polyimide (PI)-doped single-layer (PSL) phototransistor for the detection of visible light. The PSL was deposited on a SiO2 gate insulator by a co-sputtering process using amorphous indium-gallium-zinc oxide (IGZO) and PI targets simultaneously. The PSL acted as both a channel layer and a visible-light absorption layer. PI is one of the few flexible organic materials that can be fabricated into sputtering targets. Compared with the IGZO phototransistor without PI doping, the PSL phototransistor exhibited improved optoelectronic characteristics under illumination with 635 nm red light of 1 mW/mm2 intensity; the obtained photoresponsivity ranged from 15.00 to 575.00 A/W, the photosensitivity from 1.38 × 101 to 9.86 × 106, and the specific detectivity from 1.35 × 107 to 5.83 × 1011 Jones. These improvements are attributed to subgap states induced by the PI doping, which formed decomposed organic molecules, oxygen vacancies, and metal hydroxides. Furthermore, a flexible PSL phototransistor was fabricated and showed stable optoelectronic characteristics even after 10,000 bending tests.
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Collections - College of Engineering > Electrical and Electronic Engineering > 1. Journal Articles
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