Performance Improvement of Self-Aligned Coplanar Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors by Boron ImplantationPerformance Improvement of Self-Aligned Coplanar Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors by Boron Implantation
- Other Titles
- Performance Improvement of Self-Aligned Coplanar Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors by Boron Implantation
- Authors
- 강승희; ISAK LEE; KYUNG MOON KWAK; Kyeong Take Min; Nack Bong Choi; Han Wook Hwang; Hyun Chul Choi; HYUN JAE KIM
- Issue Date
- May-2022
- Publisher
- American Chemical Society
- Keywords
- indium?gallium?zinc oxide; self-aligned coplanar TFT; ion implantation; SD resistance; boron doping
- Citation
- ACS Applied Electronic Materials, v.4, pp 2,372 - 2,379
- Journal Title
- ACS Applied Electronic Materials
- Volume
- 4
- Start Page
- 2,372
- End Page
- 2,379
- URI
- https://yscholarhub.yonsei.ac.kr/handle/2021.sw.yonsei/6299
- DOI
- 10.1021/acsaelm.2c00196
- ISSN
- 2637-6113
2637-6113
- Abstract
- The electrical properties and device stability of a self-aligned (SA) coplanar amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) were investigated by implanting boron (B) into the source/drain (SD) n+ region. To evaluate the effect according to the depth profile of B in the a-IGZO film, various implantation energies were applied. The electrical properties were optimized when the projection range of B was in the central vertical region of the a-IGZO film. B implantation decreased the resistivity of the a-IGZO film from 3.1 × 102 to 2.1 × 10-3 ω·cm compared to an untreated a-IGZO film, while the field-effect mobility (μfe) improved from 2.96 to 17.22 cm2/(V·s). Moreover, the fabricated SA coplanar a-IGZO TFTs with a B-doped n+ region exhibited excellent stability, with a threshold voltage shift (ΔVth) of <0.2 V during a 3000 s thermal stability test performed at 200 °C and a bias stress test under a gate voltage of ±20 V. During the implantation process, B ions with high kinetic energy collide with IGZO atoms, resulting in the formation of an oxygen vacancy (VO) and an oxygen interstitial (Oi) simultaneously. The implanted B ions and Oi are bonded such that the VO sites are maintained by the B-O reaction and can contribute to an increase in the carrier concentration in a-IGZO films, thereby increasing the conductivity of the n+ region.
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Collections - College of Engineering > Electrical and Electronic Engineering > 1. Journal Articles
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