Tailored Self-Assembled Monolayer using Chemical Coupling for Indium-Gallium-Zinc Oxide Thin-Film Transistors: Multifunctional Copper Diffusion Barrier
- Authors
- Lee Seungmin; Lee Sanghyeon; Lee Minkyu; Rho Sung Min; Kim Hyung Tae; Won Chihyeong; Yoon Kukro; Kwon Chaebeen; Kim Juyoung; Park Geun Chul; Lim Jun Hyung; Park Joon Seok; Kwon Woobin; Park Young-Bae; Chun Dong Won; Kim Hyun Jae; Lee Taeyoon
- Issue Date
- Dec-2022
- Publisher
- American Chemical Society
- Citation
- ACS Applied Materials & Interfaces, v.14, no.50, pp 56310 - 56320
- Pages
- 11
- Journal Title
- ACS Applied Materials & Interfaces
- Volume
- 14
- Number
- 50
- Start Page
- 56310
- End Page
- 56320
- URI
- https://yscholarhub.yonsei.ac.kr/handle/2021.sw.yonsei/6389
- ISSN
- 1944-8244
1944-8252
- Abstract
- Controlling the contact properties of a copper (Cu) electrode is an important process for improving the performance of an amorphous indium- gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) for high-speed applications, owing to the low resistance-capacitance product constant of Cu. One of the many challenges in Cu application to a-IGZO is inhibiting high diffusivity, which causes degradation in the performance of a-IGZO TFT by forming electron trap states. A self-assembled monolayer (SAM) can perfectly act as a Cu diffusion barrier (DB) and passivation layer that prevents moisture and oxygen, which can deteriorate the TFT on-off performance. However, traditional SAM materials have high contact resistance and low mechanical-adhesion properties. In this study, we demonstrate that tailoring the SAM using the chemical coupling method can enhance the electrical and mechanical properties of a-IGZO TFTs. The doping effects from the dipole moment of the tailored SAMs enhance the electrical properties of a-IGZO TFTs, resulting in a field-effect mobility of 13.87 cm2/V center dot s, an on-off ratio above 107, and a low contact resistance of 612 omega. Because of the high electrical performance of tailored SAMs, they function as a Cu DB and a passivation layer. Moreover, a selectively tailored functional group can improve the adhesion properties between Cu and a-IGZO. These multifunctionally tailored SAMs can be a promising candidate for a very thin Cu DB in future electronic technology.
- Files in This Item
-
- Appears in
Collections - College of Engineering > Electrical and Electronic Engineering > 1. Journal Articles
Items in Scholar Hub are protected by copyright, with all rights reserved, unless otherwise indicated.