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Enhancement in the Mobility and the Stability of Solution-Processed ZincTin Oxide Thin-Film Transistors Using Alkali Metal Superoxideopen access
- Authors
- Jung, T.S.; Lee, H.; Kim, H.J.; Lee, J.H.; Min, W.K.; Park, Kyungho; Kim, H.J.
- Issue Date
- May-2019
- Publisher
- John Wiley and Sons Inc
- Keywords
- Alkali metal; Oxide semiconductor; Solution process; Superoxide radical; Thin film transistor
- Citation
- SID Symposium Digest of Technical Papers, v.50, no.1, pp 1298 - 1301
- Pages
- 4
- Journal Title
- SID Symposium Digest of Technical Papers
- Volume
- 50
- Number
- 1
- Start Page
- 1298
- End Page
- 1301
- ISSN
- 0097-966X
2168-0159
- Abstract
- We have studied how to improve the mobility and stability of solution processed zinc-tin oxide thin-film transistors (ZTO TFTs) simultaneously using multifunctional potassium superoxide precursor. Potassium cations in the potassium superoxide precursor acts as a shallow donor in the ZTO thin film to improve the carrier concentration (electron), which allows the potassium-doped ZTO TFT to exhibit high mobility. Then, the anion of the precursor exists as a superoxide radical, and it showed the effect of reducing the oxygen vacancy in the process of forming the oxide thin film. Consequently, potassiumdoped ZTO TFT using potassium superoxide precursor exhibited improved mobility and stability, showing an increase in the mobility from 5.11 to 8.36 cm2/Vs and a decrease in the threshold voltage shift from 4.65 to 3.36 V under a negative bias temperature illumination stress test conducted over 5,000 sec.. © 2019 SID.
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Collections - College of Engineering > Electrical and Electronic Engineering > 1. Journal Articles
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