Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing
- Authors
- Si Joon Kim; Yong Chan Jung; Jaidah Mohan; Hyo Jeong Kim; SUNG MIN RHO; Min Seong Kim; Jeong Gyu Yoo; Hye Ryeon Park; Heber Hernandez-Arriaga; Jin-Hyun Kim; HYUNG TAE KIM; DONG HYUN CHOI; Joohye Jung; Su Min Hwang; Harrison Sejoon Kim; HYUN JAE KIM; Jiyoung Kim
- Issue Date
- 13-Dec-2021
- Publisher
- AMER INST PHYSICS
- Keywords
- Ferroelectric; High-pressure annealing; low-thermal budget
- Citation
- APPLIED PHYSICS LETTERS, v.119, no.24, pp 242901-1 - 242901-5
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 119
- Number
- 24
- Start Page
- 242901-1
- End Page
- 242901-5
- URI
- https://yscholarhub.yonsei.ac.kr/handle/2021.sw.yonsei/6705
- DOI
- 10.1063/5.0075466
- ISSN
- 0003-6951
1077-3118
- Abstract
- In this Letter, a high-pressure annealing (HPA) process is proposed as a way to reduce the thermal budget of Hf0.5Zr0.5O2 (HZO) thin films with ferroelectric behaviors. The low-thermal-budget process is essential for integrating ferroelectric devices in the back-end-of-line to provide more functionalities and effective memory area. For the HZO film annealed at 300?°C using the HPA process, an orthorhombic phase responsible for ferroelectric behavior was formed with a decrease in film thickness, resulting in a remanent polarization (Pr) of ∼13?μC/cm2 (i.e., 2Pr of ∼26?μC/cm2). Meanwhile, when only the annealing time was increased at 300?°C without applying pressure, the HZO film did not crystallize and exhibited linear dielectric properties. Consequently, the HZO films (<10?nm) can be crystallized by applying pressure (15?atm) even at low temperatures of 300?°C, thereby obtaining ferroelectric properties.
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Collections - College of Engineering > Electrical and Electronic Engineering > 1. Journal Articles
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