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Photo-induced Reactive Oxygen Species Activation for Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Sodium HypochloritePhoto-induced Reactive Oxygen Species Activation for Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors Using Sodium Hypochlorite

Other Titles
Photo-induced Reactive Oxygen Species Activation for Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors Using Sodium Hypochlorite
Authors
WonKi KIM탁영준HyukJoon YooHYUNG TAE KIMJEONG WOO PARKDONG HYUN CHOIHYUN JAE KIM
Issue Date
Sep-2021
Publisher
AMER CHEMICAL SOC
Keywords
thin-film transistors; amorphous indium?gallium?zinc-oxide; sodium hypochlorite; reactive oxygen species; low temperature
Citation
ACS APPLIED MATERIALS & INTERFACES, v.13, no.37, pp 44,531 - 44,540
Journal Title
ACS APPLIED MATERIALS & INTERFACES
Volume
13
Number
37
Start Page
44,531
End Page
44,540
URI
https://yscholarhub.yonsei.ac.kr/handle/2021.sw.yonsei/6712
DOI
10.1021/acsami.1c10727
ISSN
1944-8244
Abstract
We proposed a novel material named sodium hypochlorite (NaClO) solution as a source of activation for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). We reduced the activation temperature from 300 to 150 °C using NaClO solution (concentration: 50%) and obtained satisfactory electrical characteristics of a-IGZO TFTs. The field-effect mobility, threshold voltage, on/off ratio, subthreshold swing, and threshold voltage (Vth) shift under negative bias illumination stress (VG = -20 V and VD = 10.1 V for 10,000 s) of NaClO (50%)-activated a-IGZO TFTs were 10.41 cm2/V·s, 1.51 V, 2.78 × 108, 0.37 V/dec, and -5.43 V, respectively. Also, the Vth shifts of the NaClO (50%)-activated a-IGZO TFTs (150 °C) under the positive bias stress test decreased from 5.01 to 1.87 V (VG = 20 V and VD = 10.1 V for 10,000 s) compared with that of only-annealed (300 °C) a-IGZO TFTs. Also, the mechanism of NaClO activation for a-IGZO TFTs is clarified through photo-assisted oxygen radical (POR) and heat-driven oxygen radical (HOR) effects. The POR and HOR effects generated the reactive oxygen species (ROS) from NaClO solution (50%), which activated a-IGZO TFTs at a low temperature (150 °C). When the NaClO solution (50%) was exposed to external energy, it generated ROS such as hydroxyl radicals (OH?), hydroperoxyl radicals (HO2?), and oxygen radicals (O?), which promoted the formation of strong metal-oxide bonds in a-IGZO TFTs. Furthermore, NaClO solution (50%) was applied to a-IGZO TFTs on a flexible polyimide substrate and electrohydrodynamic printing process for selective deposition.
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