Multifunctional Oxygen Scavenger Layer for High-Performance Oxide Thin-Film Transistors with Low-Temperature Processing
- Authors
- 김민성; HYUNG TAE KIM; HyukJoon Yoo; DONG HYUN CHOI; JEONG WOO PARK; Tae Sang Kim; Jun Hyung Lim; HYUN JAE KIM
- Issue Date
- Jul-2021
- Publisher
- AMER CHEMICAL SOC
- Keywords
- oxide semiconductor; thin-film transistor; annealing process; oxygen scavenger layer; hafnium
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.13, no.27, pp 31,816 - 31,824
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 13
- Number
- 27
- Start Page
- 31,816
- End Page
- 31,824
- URI
- https://yscholarhub.yonsei.ac.kr/handle/2021.sw.yonsei/6714
- DOI
- 10.1021/acsami.1c05565
- ISSN
- 1944-8244
- Abstract
- In this study, the oxygen scavenger layer (OSL) is proposed as a back channel in the bilayer channel to enhance both the electrical characteristics and stability of an amorphous indium?gallium?zinc oxide thin-film transistor (a-IGZO TFT) and also to enable its fabrication at low temperature. The OSL is a hafnium (Hf)-doped a-IGZO channel layer deposited by radio-frequency magnetron cosputtering. Amorphous IGZO TFTs with the OSL, even if annealed at a low temperature (200 °C), exhibited improved electrical characteristics and stability under positive bias temperature stress (PBTS) compared to those without the OSL, specifically in terms of field-effect mobility (31.08 vs 9.25 cm2/V s), on/off current ratio (1.73 × 1010 vs 8.68 × 108), and subthreshold swing (0.32 vs 0.43 V/decade). The threshold voltage shift under PBTS at 50 °C for 10,000 s decreased from 9.22 to 2.31 V. These enhancements are attributed to Hf in the OSL, which absorbs oxygen ions from the a-IGZO front channel near the interface between a-IGZO and the OSL.
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