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Scientific Data
ISSN
E 2052-4463
출판사
Nature Publishing Group
국가
ENGLAND
발행 상태
활성
데이터베이스 수록 정보
CiteScore 2014-2025 (12년)
DOAJ 2017-2025 (9년)
EMBASE 2016-2026 (11년)
JCR 2016-2025 (10년)
MEDLINE 2016-2024 (9년)
SCIE 2016-2026 (11년)
Scopus 2014-2026 (13년)
SJR 2015-2020, 2022-2025 (10년)
전체 5건 중 1번부터 5번까지의 결과를 표시합니다.
2026
Article
DPe-CIM: A 4T-1C Dual-Port eDRAM-Based Compute-in-Memory for Simultaneous Computing and Refresh With Adaptive Refresh and Data Conversion Reduction Scheme
- Kim Do Han ;
- Jo Minyoung ;
- Seok Kim Gi ;
- Gyun Ha Dong ;
- Bin Oh Ung ;
- ... 고동한 ;
- 외 3명
- 2026-06
- IEEE Journal of Solid-State Circuits
- Institute of Electrical and Electronics Engineers
Article
A 3× Offset, 2.9× Power, 1.3× Sensing Time, and 4× Area Reduction Direct Input Transfer Offset Cancel DRAM IO Sense Amplifier With Static Current-Free Pre-Sensing
- Lim, Do-Yoon ;
- Lim, Sehee ;
- 고동한 ;
- Jung, In-Jun ;
- Kim, Giseok ;
- 외 7명
- 2026-03
- IEEE Journal of Solid-State Circuits
- Institute of Electrical and Electronics Engineers
2025
Article
Dual-Input Stacked Inverter-Based Single-Ended DRAM Sense Amplifier Using BL Switches for Low-Power High-Speed Sensing
- Lim Sehee ;
- Jung In Jun ;
- Kim Gi Seok ;
- 고동한 ;
- Lee Sumin ;
- 외 1명
- 2025-06
- IEEE Journal of Solid-State Circuits
- Institute of Electrical and Electronics Engineers
2023
Article
Dual-Mode Operations of Self-Rectifying Ferroelectric Tunnel Junction Crosspoint Array for High-Density Integration of IoT Devices
- Lim Sehee ;
- Goh Youngin ;
- Lee Young Kyu ;
- 고동한 ;
- Hwang Junghyeon ;
- 외 4명
- 2023-07
- IEEE Journal of Solid-State Circuits
- Institute of Electrical and Electronics Engineers
2022
Article
SRAM Write- and Performance-Assist Cells for Reducing Interconnect Resistance Effects Increased With Technology Scaling
- KEONHEE CHO ;
- HEE KYUNG CHOI ;
- INJUN JUNG ;
- 오지상 ;
- TAE WOO OH ;
- 외 6명
- 2022-04
- IEEE Journal of Solid-State Circuits
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC