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Cross-Coupled Ferroelectric FET-Based Ternary Content Addressable Memory With Energy-Efficient Match Line Scheme

Authors
Lim, SeheeKo, Dong Han김세건Jung, Seong-Ook
Issue Date
Feb-2023
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
IEEE Transactions on Circuits and Systems I: Regular Papers, v.70, no.2, pp 806 - 818
Pages
13
Journal Title
IEEE Transactions on Circuits and Systems I: Regular Papers
Volume
70
Number
2
Start Page
806
End Page
818
URI
https://yscholarhub.yonsei.ac.kr/handle/2021.sw.yonsei/23293
DOI
10.1109/tcsi.2022.3222383
ISSN
1549-8328
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College of Engineering > 공과대학 전기전자공학부 > 공과대학 전기전자공학과 > 1. Journal Articles

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