Novel Method for Fabricating Visible-Light Phototransistors Based on a Homojunction-Porous IGZO Thin Film Using Mechano-Chemical Treatment
- Authors
- ISAK LEE; Joohye Jung; DONG HYUN CHOI; SUJIN JUNG; KYUNG MOON KWAK; HYUN JAE KIM
- Issue Date
- Aug-2021
- Publisher
- AMER CHEMICAL SOC
- Keywords
- phototransistors; oxide thin-film transistors; indium gallium zinc oxide; mechano-chemical treatment; sub-gap states
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.13, no.30, pp 35,981 - 35,989
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 13
- Number
- 30
- Start Page
- 35,981
- End Page
- 35,989
- URI
- https://yscholarhub.yonsei.ac.kr/handle/2021.sw.yonsei/5254
- DOI
- 10.1021/acsami.1c09012
- ISSN
- 1944-8244
- Abstract
- A homojunction-structured oxide phototransistor based on a mechano-chemically treated indium?gallium?zinc oxide (IGZO) absorption layer is reported. Through this novel and facile mechano-chemical treatment, mechanical removal of the cellophane adhesive tape induces reactive radicals and organic compounds on the sputtered IGZO film surface. Surface modification, following the mechano-chemical treatment, caused porous sites in the solution-processed IGZO film, which can give rise to a homojunction-porous IGZO (HPI) layer and generate sub-gap states from oxygen-related defects. These intentionally generated sub-gap states played a key role in photoelectron generation under illumination with relatively long-wavelength visible light despite the wide band gap of IGZO (>3.0 eV). Compared with conventional IGZO phototransistors, our HPI phototransistor displayed outstanding optoelectronic characteristics and sensitivity; we measured a threshold voltage (Vth) shift from 3.64 to ?6.27 V and an on/off current ratio shift from 4.21 × 1010 to 4.92 × 102 under illumination with a 532 nm green light of 10 mW/mm2 intensity and calculated a photosensitivity of 1.16 × 108. The remarkable optoelectronic characteristics and high optical transparency suggest optical sensor applications.
- Files in This Item
-
- Appears in
Collections - College of Engineering > Electrical and Electronic Engineering > 1. Journal Articles
Items in Scholar Hub are protected by copyright, with all rights reserved, unless otherwise indicated.