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Simultaneously Defined Semiconducting Channel Layer Using Electrohydrodynamic Jet Printing of a Passivation Layer for Oxide Thin-Film Transistors

Authors
Seonghwan HongJAEWON NAISAK LEEHYUNG TAE KIMBYUNGHA KANGjusung ChungHYUN JAE KIM
Issue Date
Sep-2020
Publisher
AMER CHEMICAL SOC
Keywords
oxide thin-film transistor; solution process; electrohydrodynamic jet printing; passivation layer; diffusion
Citation
ACS APPLIED MATERIALS & INTERFACES, v.12, no.35, pp.39,705 - 39,712
Journal Title
ACS APPLIED MATERIALS & INTERFACES
Volume
12
Number
35
Start Page
39,705
End Page
39,712
URI
https://yscholarhub.yonsei.ac.kr/handle/2021.sw.yonsei/5262
DOI
10.1021/acsami.0c07091
ISSN
1944-8244
Abstract
A simple fabrication method for homojunction-structured Al-doped indium?tin oxide (ITO) thin-film transistors (TFTs) using an electrohydrodynamic (EHD) jet-printed Al2O3 passivation layer with specific line (WAl2O3) is proposed. After EHD jet printing, the specific region of the ITO film below the Al2O3 passivation layer changes from a conducting electrode to a semiconducting channel layer simultaneously upon the formation of the passivation layer during thermal annealing. The channel length of the fabricated TFTs is defined by WAl2O3, which can be easily changed with varying EHD jet printing conditions, i.e., no need of replacing the mask for varying patterns. Accordingly, the drain current and resistance of the fabricated TFTs can be modified by varying the WAl2O3. Using the proposed method, a transparent n-type metal?oxide?semiconductor (NMOS) inverter with an enhancement load can be fabricated; the effective resistance of load and drive TFTs is easily tuned by varying the processing conditions using this simple method. The fabricated NMOS inverter exhibits an output voltage gain of 7.13 with a supply voltage of 10 V. Thus, the proposed approach is promising as a low-cost and flexible manufacturing system for multi-item small-lot-sized production of Internet of Things devices.
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