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Versatile Solution-Processed Organic-Inorganic Hybrid Superlattices for Ultraflexible and Transparent High-Performance Optoelectronic Devices

Authors
Le, MN (Le, Minh Nhut)Baeg, KJ (Baeg, Kang-Jun)Kim, KT (Kim, Kyung-Tae)Kang, SH (Kang, Seung-Han)Choi, BD (Choi, Byung Doo)Park, CY (Park, Chan-Yong)Jeon, SP (Jeon, Seong-Pil)이솔Jo, JW (Jo, Jeong-Wan)Kim, S (Kim, Seonhyoung)Park, JG (Park, Jun-Gu)Ho, D (Ho, Dongil)Hong, J (Hong, Jongin)Kim, M (Kim, Miso)Kim, HK (Kim, Han-Ki)Kim, C (Kim, Choongik)KWANPYO KIMKim, YH (Kim, Yong-Hoon)Park, SK (Park, Sung Kyu)Kim, MG (Kim, Myung-Gil)...More...Less
Issue Date
Jul-2021
Publisher
WILEY-V C H VERLAG GMBH
Keywords
flexible optoelectronics; metal oxides; solution process; superlattices; thin-fllm transistor
Citation
ADVANCED FUNCTIONAL MATERIALS, v.31, no.29, pp.2103285-1 - 2103285-12
Journal Title
ADVANCED FUNCTIONAL MATERIALS
Volume
31
Number
29
Start Page
2103285-1
End Page
2103285-12
URI
https://yscholarhub.yonsei.ac.kr/handle/2021.sw.yonsei/5277
DOI
10.1002/adfm.202103285
ISSN
1616-301X
Abstract
Crystalline or amorphous metal oxides are widely used in various optoelectronic devices as key components, such as transparent conductive electrodes, dielectrics or semiconducting active layers for thin-film transistor (TFT) backplanes in large-area displays, photovoltaics, and light-emitting diodes. Although crystalline inorganic materials demonstrate outstanding optoelectronic performance, owing to their wide bandgaps, large conductivities, and high carrier mobilities, their inherent brittleness makes them vulnerable to mechanical stress, thereby limiting the use of metal-oxide films in emerging flexible electronic applications. In this study, stress-diffusive organic-inorganic hybrid superlattice nanostructures are developed to overcome the mechanical limitation of crystalline oxides and to provide high mechanical stability to metal-oxide semiconductors. In particular, hybrid transparent superlattice electrodes based on crystalline indium-tin oxide exhibit high electrical conductivities of up to 555 S cm(-1) (resistance variation < 3%) and effectively reduce the mechanical stress on the inorganic layer (up to 10 000 bending cycles with a radius of 1 mm). Furthermore, to ensure the viability of the hybrid superlattice flexible electronics, all solution-processed superlattice crystalline indium-gallium-oxide TFTs are implemented on a thin (approximate to 5 mu m) polyimide substrate, providing highly robust and excellent electrical performance (average mobility of 7.6 cm(2) V-1 s(-1)).
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