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Single-Crystalline Metallic Films Induced by van der Waals Epitaxy on Black Phosphorus

Authors
YANGJIN LEEHanGyu KimTaeKeun YunKim, JC (Kim, Jong Chan)이솔SUNGJINYANG장명진DONGGYUKIMRyu, H (Ryu, Huije)Lee, GH (Lee, Gwan-Hyoung)SEONGIL IMJeong, HY (Jeong, Hu Young)Hyoung Joon ChoiKWANPYO KIM
Issue Date
May-2021
Publisher
AMER CHEMICAL SOC
Keywords
black phosphorus; interface; metal-semiconductor junction
Citation
CHEMISTRY OF MATERIALS, v.33, no.10, pp.3,593 - 3,601
Journal Title
CHEMISTRY OF MATERIALS
Volume
33
Number
10
Start Page
3,593
End Page
3,601
URI
https://yscholarhub.yonsei.ac.kr/handle/2021.sw.yonsei/5282
DOI
10.1021/acs.chemmater.1c00267
ISSN
0897-4756
Abstract
The properties of metal-semiconductor junctions are often unpredictable because of non-ideal interfacial structures, such as interfacial defects or chemical reactions introduced at junctions. Black phosphorus (BP), an elemental two-dimensional (2D) semiconducting crystal, possesses a puckered atomic structure with high chemical reactivity, and the establishment of a realistic atomic-scale picture of BP's interface toward the metallic contact has remained elusive. Here, we examine the interfacial structures and properties of physically deposited metals of various kinds on BP. We find that Au, Ag, and Bi form single-crystalline films with a (110) orientation through guided van der Waals epitaxy. Transmission electron microscopy and X-ray photoelectron spectroscopy confirm that atomically sharp van der Waals metal-BP interfaces are formed with an exceptional rotational alignment. Under a weak metal-BP interaction regime, BP's puckered structure plays an essential role in the adatom assembly process and can lead to the formation of a single crystal, which is supported by our theoretical analysis and calculations. The experimental survey also demonstrates that the BP-metal junctions can exhibit various types of interfacial structures depending on metals, such as the formation of a polycrystalline microstructure or metal phosphides. This study provides a guideline for obtaining a realistic view on metal-2D semiconductor interfacial structures, especially for atomically puckered 2D crystals.
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