Detailed Information

Cited 11 time in webofscience Cited 11 time in scopus
Metadata Downloads

Mechanochemical and Thermal Treatment for Surface Functionalization to Reduce the Activation Temperature of In-Ga-Zn-O Thin-film Transistors

Authors
Lee, I. SakTak, Young JunKang, Byung HaYoo, HyukjoonJung, SujinKim, Hyun Jae
Issue Date
Apr-2020
Publisher
American Chemical Society
Citation
ACS Applied Materials and Interfaces, v.12, no.16, pp.19123 - 19129
Journal Title
ACS Applied Materials and Interfaces
Volume
12
Number
16
Start Page
19123
End Page
19129
URI
https://yscholarhub.yonsei.ac.kr/handle/2021.sw.yonsei/5374
DOI
10.1021/acsami.9b22831
ISSN
1944-8244
Abstract
Amorphous indium-gallium-zinc oxide (a-IGZO) films, which are widely regarded as a promising material for the channel layer in thin-film transistors (TFTs), require a relatively high thermal annealing temperature to achieve switching characteristics through the formation of metal-oxygen (M-O) bonding (i.e., the activation process). The activation process is usually carried out at a temperature above 300 degrees C; however, achieving activation at lower temperatures is essential for realizing flexible display technologies. Here, a facile, low-cost, and novel technique using cellophane tape for the activation of a-IGZO films at a low annealing temperature is reported. In terms of mechanochemistry, mechanical pulling of the cellophane tape induces reactive radicals on the a-IGZO film surface, which can give rise to improvements in the properties of the a-IGZO films, leading to an increase in the number of M-O bonds and the carrier concentration via radical reactions, even at 200 degrees C. As a result, the a-IGZO TFTs, compared to conventionally annealed a-IGZO TFTs, exhibited improved electrical performances, such as mobility, on/off current ratio, and threshold voltage shift (under positive bias temperature and negative bias temperature stress for 10,000 s at 50 degrees C) from 8.25 to 12.81 cm(2)/(V.s), 2.85 x 10(7) to 1.21 x 10(8), 6.81 to 3.24 V, and -6.68 to -4.93 V, respectively.
Files in This Item
There are no files associated with this item.
Appears in
Collections
College of Engineering > Electrical and Electronic Engineering > 1. Journal Articles

qrcode

Items in Scholar Hub are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher I Sak, Lee photo

I Sak, Lee
College of Engineering (Electrical and Electronic Engineering)
Read more

Altmetrics

Total Views & Downloads

BROWSE