One-Sided Schmitt-Trigger-Based 9T SRAM Cell for Near-Threshold Operation
- Authors
- Cho K.; Park J.; Oh T.W.; Jung S.-O.
- Issue Date
- May-2020
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- Bit interleaving; low energy; near-Threshold; Schmitt-Trigger; static random access memory (SRAM)
- Citation
- IEEE Transactions on Circuits and Systems I: Regular Papers, v.67, no.5, pp 1551 - 1561
- Pages
- 11
- Journal Title
- IEEE Transactions on Circuits and Systems I: Regular Papers
- Volume
- 67
- Number
- 5
- Start Page
- 1551
- End Page
- 1561
- URI
- https://yscholarhub.yonsei.ac.kr/handle/2021.sw.yonsei/6603
- DOI
- 10.1109/TCSI.2020.2964903
- ISSN
- 1549-8328
1558-0806
- Abstract
- This paper presents a one-sided Schmitt-Trigger-based 9T static random access memory cell with low energy consumption and high read stability, write ability, and hold stability yields in a bit-interleaving structure without write-back scheme. The proposed Schmitt-Trigger-based 9T static random access memory cell obtains a high read stability yield by using a one-sided Schmitt-Trigger inverter with a single bit-line structure. In addition, the write ability yield is improved by applying selective power gating and a Schmitt-Trigger inverter write assist technique that controls the trip voltage of the Schmitt-Trigger inverter. The proposed Schmitt-Trigger-based 9T static random access memory cell has 0.79, 0.77, and 0.79 times the area, and consumes 0.31, 0.68, and 0.90 times the energy of Chang's 10T, the Schmitt-Trigger-based 10T, and MH's 9T static random access memory cells, respectively, based on 22-nm FinFET technology. © 2004-2012 IEEE.
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Collections - College of Engineering > Electrical and Electronic Engineering > 1. Journal Articles
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