고동한 프로필 사진

고동한

Donghan, Ko

공과대학

공과대학 전기전자공학과

ORCID

연구분야

  • Computing-in-memory
  • Emerging nonvolatile memory (FeFET, STT-MRAM)
  • Low power digital circuit
  • 저전력 디지털 회로
  • 차세대 비휘발성 메모리 (FeFET, STT-MRAM)
  • 컴퓨팅-인-메모리

자료 필터

자료유형

발행연도

2021 ~ 2026
2021 2026

키워드

언어

전체 14건 중 1번부터 10번까지의 결과를 표시합니다.

2026
Article

DPe-CIM: A 4T-1C Dual-Port eDRAM-Based Compute-in-Memory for Simultaneous Computing and Refresh With Adaptive Refresh and Data Conversion Reduction Scheme

  • Kim Do Han
  • Jo Minyoung
  • Seok Kim Gi
  • Gyun Ha Dong
  • Bin Oh Ung
  • ... 고동한
  • 외 3명
  • 2026-06
  • IEEE Journal of Solid-State Circuits
  • Institute of Electrical and Electronics Engineers
Article

A 3× Offset, 2.9× Power, 1.3× Sensing Time, and 4× Area Reduction Direct Input Transfer Offset Cancel DRAM IO Sense Amplifier With Static Current-Free Pre-Sensing

  • Lim, Do-Yoon
  • Lim, Sehee
  • 고동한
  • Jung, In-Jun
  • Kim, Giseok
  • 외 7명
  • 2026-03
  • IEEE Journal of Solid-State Circuits
  • Institute of Electrical and Electronics Engineers
2025
Article

Dual-Input Stacked Inverter-Based Single-Ended DRAM Sense Amplifier Using BL Switches for Low-Power High-Speed Sensing

  • Lim Sehee
  • Jung In Jun
  • Kim Gi Seok
  • 고동한
  • Lee Sumin
  • 외 1명
  • 2025-06
  • IEEE Journal of Solid-State Circuits
  • Institute of Electrical and Electronics Engineers
2024
Article

Design of Physically Unclonable Function Using Ferroelectric FET With Auto Write-Back Technique for Resource-Limited IoT Security

  • Lim Sehee
  • Hwang Junghyeon
  • 고동한
  • Kim Se Keon
  • Oh Tae Woo
  • 외 2명
  • 2024-08
  • IEEE Internet of Things Journal
  • Institute of Electrical and Electronics Engineers Inc.
Article

Split WL 6T SRAM-Based Bit Serial Computing-in-Memory Macro With High Signal Margin and High Throughput

  • Lee, Young Kyu
  • 고동한
  • Cho, Seokhee
  • Yeo, Minjune
  • Kang, Mingu
  • 외 1명
  • 2024-04
  • IEEE Transactions on Circuits and Systems II: Express Briefs
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

A Charge-Domain 4T2C eDRAM Compute-in-Memory Macro With Enhanced Variation Tolerance and Low-Overhead Data Conversion Schemes

  • Jung In-Jun
  • Kim Do Han
  • Jo Minyoung
  • 고동한
  • Lee Youngkyu
  • 외 1명
  • 2024-04
  • IEEE Transactions on Circuits and Systems II: Express Briefs
  • Institute of Electrical and Electronics Engineers
Article

Ferroelectric FET Nonvolatile Sense-Amplifier-Based Flip-Flops for Low Voltage Operation

  • 2024-01
  • IEEE Transactions on Circuits and Systems I: Regular Papers
  • Institute of Electrical and Electronics Engineers
2023
Article

Dual-Mode Operations of Self-Rectifying Ferroelectric Tunnel Junction Crosspoint Array for High-Density Integration of IoT Devices

  • Lim Sehee
  • Goh Youngin
  • Lee Young Kyu
  • 고동한
  • Hwang Junghyeon
  • 외 4명
  • 2023-07
  • IEEE Journal of Solid-State Circuits
  • Institute of Electrical and Electronics Engineers
Article

Cross-Coupled Ferroelectric FET-Based Ternary Content Addressable Memory With Energy-Efficient Match Line Scheme

  • 2023-02
  • IEEE Transactions on Circuits and Systems I: Regular Papers
  • Institute of Electrical and Electronics Engineers
Article

Power-Delay Area-Efficient Processing-In-Memory Based on Nanocrystalline Hafnia Ferroelectric Field-Effect Transistors

  • Kim Giuk
  • 고동한
  • Kim Taeho
  • Lee Sangho
  • Jung Minhyun
  • 외 8명
  • 2023-01
  • ACS Applied Materials and Interfaces
  • American Chemical Society
1