Nonvolatile and Neuromorphic Memory Devices Using Interfacial Traps in Two Dimensional WSe2/MoTe2 Stack Channel
- SAM PARK; YeonSoo Jung; HYEJIN JIN; JunKyu Park; Hyenam Jang; 이솔; Woong Huh; 조현민; HYUNGGON SHIN; KWANPYO KIM; Chul-ho Lee; Shinhyun Choi; SEONGIL IM
- Issue Date
- AMER CHEMICAL SOC
- interface traps; neuromorphic device; nonvolatile memory; stack channel FET; WSe2/MoTe2 heterojunction
- ACS NANO, v.14, no.9, pp.12,064 - 12,071
- Journal Title
- ACS NANO
- Start Page
- End Page
- Very recently, stacked two-dimensional materials have been studied,
focusing on the van der Waals interaction at their stack junction interface. Here, we
report field effect transistors (FETs) with stacked transition metal dichalcogenide
(TMD) channels, where the heterojunction interface between two TMDs appears
useful for nonvolatile or neuromorphic memory FETs. A few nanometer-thin WSe2
and MoTe2 flakes are vertically stacked on the gate dielectric, and bottom p-MoTe2
performs as a channel for hole transport. Interestingly, the WSe2/MoTe2 stack
interface functions as a hole trapping site where traps behave in a nonvolatile
manner, although trapping/detrapping can be controlled by gate voltage (VGS).
Memory retention after high VGS pulse appears longer than 10000 s, and the
Program/Erase ratio in a drain current is higher than 200. Moreover, the traps are
delicately controllable even with small VGS, which indicates that a neuromorphic
memory is also possible with our heterojunction stack FETs. Our stack channel
FET demonstrates neuromorphic memory behavior of ∼94% recognition accuracy.
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- College of Science > Physics > 1. Journal Articles
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